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1500V MOS Discretes ◆ Low Rdson; ◆ High Speed Switch; ◆ High UIS; More
RC-IGBT Discretes ◆ IGBT/FWD On the Same Chip; ◆ Low Vcesat; ◆ High Reliability; ◆成本低； More
M3i-GT Low Vcesat IGBT Discretes ◆ Trench & Fieldstop Technology; ◆ Soft Turn On Characteristic,Low di/dt,Low EMI; ◆ Small Tail Current,Soft Turn Off Characteristic;; More
GTU High Speed IGBT Discretes ◆ Trench & Fieldstop Technology; ◆ Soft Turn On Characteristic,Low di/dt,Low EMI; ◆ Low Tf,Low Eoff; More
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國家集成電路產(chǎn)業(yè)投資基金股份有限… 7月12日，國家集成電路產(chǎn)業(yè)投資基金股份有限公司總裁、中國高端芯… 2018-07-16 More
我司“國產(chǎn)新型RC IGBT芯片及… 2018年主題為“創(chuàng)新促發(fā)展，創(chuàng)業(yè)贏未來”的常州市創(chuàng)新創(chuàng)業(yè)大賽… 2018-07-06 More
“宏微－北汽新能源IGBT聯(lián)合實(shí)… 1月末，“2018北汽新能源全球伙伴大會”在北京舉行，我司董事長趙… 2018-02-22 More
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